gaas beam lead schottky barrier diodes MA4E2037, ma4e2039, ma4e2040 m/a-com division of amp incorporated q north america: tel. (800) 366-2266, fax (800) 618-8883 q asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 q europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v3.001 features low series resistance low capacitance high cut-off frequency silicon nitride passivation multiple configurations descri p tion m/a-com's MA4E2037 single, ma4e2039 antiparallel pair and ma4e2040 series tee are gallium arsenide beam lead schottky barrier diodes. these devices are fabricated on omcvd epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. the high carrier mobility of gallium arsenide results in lower series resistance than a silicon schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. the diodes are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. the protective coatings prevent damage to the junction and the anode airbridge during handling. a pp lications the high cut-off frequency of these diodes allows use through low millimeter wave frequencies. typical applications include single and double balanced mixers in pcn transceivers and radios, automotive radar systems and police radar detectors. the ma4e2039 antiparallel pair is designed for use in subhar- monically pumped mixers. close matching of the diode charac- teristics results in high lo suppression at the rf input. packa g e outlines 1, 2 notes: (unless otherwise specified) 1. dimensions are in mm (mils) 2. views are with junction side up. gaas beam lead schottk y barrier diodes MA4E2037, ma4e2039, ma4e2040 absolute maximum ratin g s 1 parameter maximum ratings operating temperature -65c to +125c storage temperature -65c to +125c incident lo power +20 dbm incident rf power +2- dbm mounting temperature +235c for 10 seconds 1. exceeding these limits may cause permanent damage. 0.135 .010 (5.3 .4) 0.210 .040 (8.3 1.6) 0.009 (0.4) 0.013 (0.5) 0.630 .010 (24.8 .6) 0.060 (2.4) 0.085 (3.4) 0.265 .040 (10.4 1.6) 0.180 .020 (7.1 .8) 0.135 .010 (5.3 .4) 0.210 .040 (8.3 1.6) 0.009 (0.4) 0.013 (0.5) 0.630 .010 (24.8 .6) 0.060 (2.4) 0.085 (3.4) 0.265 .040 (10.4 1.6) 0.180 .020 (7.1 .8) 0.135 .010 (5.3 .4) 0.230 .040 (9.1 1.6) 0.009 (0.4) 0.013 (0.5) 0.350 .040 (13.8 1.6) 0.175 .020 (6.9 .8) 0.700 .015 (27.6 .6) 0.060 (2.4) 0.085 (3.4) 0.135 .010 (5.3 .4) 0.375 .015 (14.8 .6) MA4E2037 ma4e2039 ma4e2040
gaas beam lead schottky barrier diodes MA4E2037, ma4e2039, ma4e2040 m/a-com division of amp incorporated q north america: tel. (800) 366-2266, fax (800) 618-8883 q asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 q europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v3.001 electrical s p ecifications @ t a = +25c MA4E2037 ma4e2039 ma4e2040 single anti-parallel series tee symbol parameters and test conditions units min. typ. max. min. typ. max. min. typ. max. c j junction capacitance at 0v at 1 mhz pf - .020 - - .020 3 --.020 3 c t total capacitance at 0v at 1 mhz 1 pf .040 .050 .060 0.40 3 .050 3 .060 3 .040 3 .050 3 .060 3 ? c t total capacitance difference pf - - - - - - - .005 .010 r s series resistance at +10ma 2 ohms - 4 7 - 4 7 - 4 7 v f1 forward voltage at +1ma volts .60 .70 .80 .60 .70 .80 .60 .70 .80 ? v f forward voltage difference at 1ma volts - - - - .005 .010 - .005 .010 v br reverse breakdown voltage at -10 m a volts 4.5 7 - - - - 4.5 7 - 1. total capacitance is equivalent to the sum of junction capacitance cj and parasitic capacitance cp. 2. series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms at + 10 ma. 3. capacitance for the ma4e2039 and ma4e2040 is per schottky diode. handlin g procedures the following precautions should be observed to avoid damag- ing these chips: cleanliness: these devices should be handled in a clean environment. do not attempt to clean die after installation. static sensitivity: schottky barrier diodes are esd sensitive and can be damaged by static electricity. proper esd techniques should be used when handling these devices. general handling: these devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. beam lead devices must, however, be handled with care since the leads may easily be distorted or broken by the normal pressures exerted when handled by tweezers. a vacuum pencil with a #27 tip is recommended for picking and placing. a sharpened wooden stick which has been dipped in isopropyl alcohol may also be used as a pick and place tool. mountin g techni q ues these devices are designed to be inserted onto hard or soft substrates. recommended methods of attachment include ther- mocompression bonding, parallel-gap welding, solder reflow and conductive epoxy. see application note m541, bonding and handling proce- dures for chip diode devices for detailed instructions. 0.00 0.01 0.10 1.00 10.00 100.00 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 forward voltage (v) forward current (ma) t = 125 o c t = 25 o c t = -50 o c t yp ical forward characteristics
gaas beam lead schottky barrier diodes MA4E2037, ma4e2039, ma4e2040 m/a-com division of amp incorporated q north america: tel. (800) 366-2266, fax (800) 618-8883 q asia/pacific: tel.+85 2 2111 8088, fax +85 2 2111 8087 q europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 www.macom.com amp and connecting at a higher level are trademarks. specifications subject to change without notice. v3.001
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